MONTE CARLO SIMULATION OF DEFECT FORMATION IN THE CRYSTALLINE STRUCTURE OF INAS SEMICONDUCTOR ON A SAPPHIRE SUBSTRATE UNDER NEUTRON FLUX
https://doi.org/10.56304/S2079562926020041
EDN: GUJUAW
Abstract
The article is devoted to Monte Carlo simulation of the effect of neutron flux on the crystalline structure of an InAs semiconductor on a sapphire substrate using the Geant4 and SRIM software environments. The list of generated secondary particles, their ranges, and the number of vacancies per ion are examined. Based on numerical modeling, conclusions are drawn regarding the positioning of the semiconductor film during irradiation and its impact on the mechanical, optical, and electrophysical properties.
About the Authors
V. R. Yamurzin
Joint Institute for Nuclear Research
Russian Federation
Russian Federation
M. V. Bulavin
Joint Institute for Nuclear Research
Russian Federation
Russian Federation
References
1. Лебедев А.А., Челноков В.Е. Широкозонные полупроводники для силовой электроники // Физика и техника полупроводников. 1999. Т. 33 (9). С. 1096–1099.
2. Bolshakova I. et al. Magnetic measuring instrumentation with radiation-resistant hall sensors for fusion reactors: experience of testing at JET // IEEE Trans. Nucl. Sci. 2012. V. 59 (4). P. 1224–1231.
3. Fauzi D.A. et al. Effects of high neutron fluence on the electrical characteristics of InAs quantum dot structures // IEEE 4th Int. Conf. Photonics (ICP). Melaka, Malaysia. 2013. 227–229. https://doi.org/10.1109/ICP.2013.6687122.2013
4. Morse E. Nuclear Fusion. 2018. Cham: Springer.
5. Васильев А.В. и др. Влияние нейтронных потоков высокой интенсивности на чувствительность металлических сенсоров Холла. Тр. 12-ой Междунар. конф. “Взаимодействие излучений с твердым телом” (ВИТТ-2017). 19–22 сентября 2017. Минск. 2017. С. 44–45.
6. Shatalov A. et al. Neutron irradiation induced degradation of the collector–emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors // J. Appl. Phys. 2000. V. 88 (6). P. 3765–3767.
7. Geant4 . https://www.geant4.org.
8. SRIM – The Stopping and Range of Ions in Matter. http://www.srim.org.
9. Petrova M.O., Bulavin M.V., Rogov A.D., Yskakov A., Galushko A.V. Current Characteristics of Ionizing Radiation Fields of the IBR-2 Reactor’s Irradiation Facility for Researching Materials’ Radiation Resistance // Instrum. Exp. Tech. 2022. V. 65. P. 371–375. https://doi.org/10.1134/S0020441222030046
10. Geant4. Physics Reference Manual. https://geant4-userdoc.web.cern.ch/UsersGuides/PhysicsReference-Manual/html/index.html.
11. Nuclear Data Center JENDL-4.0. https://wwwndc.jaea.go.jp/jendl/j40/j40.html.
12. Klochkov A.N. et al. Growth by molecular beam epitaxy and characterization of n-InAs films on sapphire substrates // Appl. Surf. Sci. 2023. V. 619. P. 156722.
13. Landry G. et al. Characterization of single magnetic particles with InAs quantum-well Hall devices // Appl. Phys. Lett. 2004. V. 85 (20). P. 4693–4695.
14. Was G.S. Fundamentals of Radiation Materials Science. 2007. Berlin, Heidelberg: Springer. https://doi.org/10.1007/978-3-540-49472-0
15. Чернов И.П., Мамонтов А.П. Упорядочение структуры кристаллов ионизирующим излучением (эффект малых доз ионизирующего излучения) // Изв. Томского политехн. унив. 2000. T. 303 (1). C. 74–80. https://earchive.tpu.ru/handle/11683/2671.
16. Дворников О.В. и др. Влияние гамма-излучения на элементы аналоговых интегральных схем // Докл. Белорусс. гос. унив. информ. радиоэлектр. 2012. № 3 (65). С. 56–62. https://doklady.bsuir.by/jour/article/download/28/28.
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For citations:
Yamurzin V.R., Bulavin M.V. MONTE CARLO SIMULATION OF DEFECT FORMATION IN THE CRYSTALLINE STRUCTURE OF INAS SEMICONDUCTOR ON A SAPPHIRE SUBSTRATE UNDER NEUTRON FLUX. Nuclear Physics and Engineering. 2026;17(2):175-182. (In Russ.) https://doi.org/10.56304/S2079562926020041. EDN: GUJUAW
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