INFLUENCE OF AN OXYGEN-FREE ENVIRONMENT ON THE CHALCOGENIDE FILMS CHARACTERISTICS UPON LASER MODIFICATION BY NEAR-IR RADIATION
https://doi.org/10.56304/S207956292405035X
EDN: KLLVUH
Abstract
In this work, the features of the PbSe chalcogenide film modification as a result of irradiation with nanosecond pulses by laser treatment using various modes in an oxygen-free environment are studied. Changes in the optical properties of the films after laser irradiation and modification of their structure in a nitrogen atmosphere were studied. It is shown that the presence of a nitrogen medium does not significantly affect the optical characteristics of films obtained as a result of laser modification with an incident radiation wavelength of 1064 nm. These results indicate that there is no need to use an oxygen-free medium in the process of modifying sensitive detectors. The obtained experimental data are the basis for expanding the knowledge gained on laser modification of the structure of semiconductor chalcogenide films, as well as revealing the relationship between the optical characteristics of the material before and after laser exposure. The results of the study can be used to solve applied problems related to the manufacture of photodetectors in devices for gas and bioanalysis, photovoltaics and optoelectronics.
About the Authors
A. A. Olkhova
ITMO University
Russian Federation
Russian Federation
P. P. Omelchenko
ITMO University
Russian Federation
Russian Federation
B. G. Shulga
ITMO University
Russian Federation
Russian Federation
A. A. Patrikeeva
ITMO University
Russian Federation
Russian Federation
M. A. Dubkova
ITMO University
Russian Federation
Russian Federation
M. M. Sergeev
ITMO University
Russian Federation
Russian Federation
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Review
For citations:
Olkhova A.A., Omelchenko P.P., Shulga B.G., Patrikeeva A.A., Dubkova M.A., Sergeev M.M. INFLUENCE OF AN OXYGEN-FREE ENVIRONMENT ON THE CHALCOGENIDE FILMS CHARACTERISTICS UPON LASER MODIFICATION BY NEAR-IR RADIATION. Nuclear Physics and Engineering. 2025;16(3):344-354. (In Russ.) https://doi.org/10.56304/S207956292405035X. EDN: KLLVUH
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