Formation of Layers from Self-Bonded SiC Using Laser Radiation

Abstract

The possibility of obtaining products from self-bonded silicon carbide using laser radiation in the absence of any additional impregnation with carbon-containing materials after siliconizing has been studied. It has been established that due to the control of thermal heating at each point of influence, it is possible to sequentially carry out all the necessary stages of the standard reaction sintering procedure in one cycle and change the traditional approach to the formation of such products using high-temperature heating furnaces. The quality of sintering was determined after etching of unreacted silicon by several laboratory methods. The main attention was paid to the study of bridges between particles from secondary SiC, both inside the layers and at their boundaries, since it is they that determine the strength characteristics of the created material and allow connecting the sintering regions to each other. After working out all the necessary stages of sintering for single-layer samples, an attempt was made to sequentially build up several layers, as well as to simulate the welding process of two pre-sintered samples.