A Diffusion Model for Describing Relaxation Process in the Semiconductor Electron Depleted Layer of a Photocathode
https://doi.org/10.56304/S2079562922050529
Abstract
To improve photoemission simulation model of picosecond electron bunches in a strong electromagnetic field, a diffusion model has been developed to describe the filling of a pre-depleted semiconductor layer of a photocathode with electrons from a metal substrate. With and without taking into account the external electric field, the analytical dependences of the distribution of the electron concentration in the semiconductor layer, as well as the time dependences of the charge of the semiconductor layer, are obtained. It is shown that it is possible in principle to determine the relaxation time, i.e., the time it takes for the charge of the semiconductor layer to decrease to a given level, which is the next step in the development of the photoemission model.
About the Authors
M. V. Vladimirov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
Moscow, 115409
S. M. Polozov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
Moscow, 115409
V. I. Rashchikov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
Moscow, 115409
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Review
For citations:
Vladimirov M.V., Polozov S.M., Rashchikov V.I. A Diffusion Model for Describing Relaxation Process in the Semiconductor Electron Depleted Layer of a Photocathode. Nuclear Physics and Engineering. 2023;14(4):389-393. (In Russ.) https://doi.org/10.56304/S2079562922050529
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