Induced Charge Fluctuations Due to X-Ray Quantum Absorption Point Fluctuations in a Plane-Parallel Semiconductor Detector
https://doi.org/10.56304/S2079562922050426
Abstract
Nowadays, in the literature, are formulas for induced charge fluctuations caused by the capturing of electrons and holes by traps. However, these formulas are valid only for the case of uniform ionization in the volume of a plane-parallel semiconductor detector, and formulas that take into account the attenuation of the X-ray flux when it penetrates the detector contain errors. In this work, the formulas for fluctuations of the induced charge on the electrodes of a plane-parallel semiconductor detector due to capturing of electrons and holes by traps, as well as due to spatial fluctuations of X-quantum interaction points, taking into account the attenuation of the X-rays flux, were obtained. The obtained formulas demonstrate the role of the covariance of charge fluctuations induced by electrons and holes at the detector electrodes due to random processes occurring in the detector when detecting X-rays.
About the Author
V. V. Samedov
National Research Nuclear University MEPhI (Moscow Engineering Physics Institute)
Russian Federation
Russian Federation
Moscow, 115409
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Review
For citations:
Samedov V.V. Induced Charge Fluctuations Due to X-Ray Quantum Absorption Point Fluctuations in a Plane-Parallel Semiconductor Detector. Nuclear Physics and Engineering. 2023;14(3):248-257. (In Russ.) https://doi.org/10.56304/S2079562922050426
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